BSC109N10NS3G

Las imágenes son solo para referencia

BSC109N10NS3G

  • Fabricante
  • Mfr. Parte #BSC109N10NS3G
  • Paquete
  • Hoja de datos
  • En stock9027

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Manufacturer Infineon Technologies
Package PDFN-8(5.2x6.2)
Operating Temperature -55℃~+150℃
RDS(on) 10.9mΩ@10V,46A
Drain to Source Voltage 100V
Pd - Power Dissipation 78W
Current - Continuous Drain(Id) 63A
Reverse Transfer Capacitance (Crss@Vds) 440pF@50V
Input Capacitance(Ciss@Vds) 2.5nF@50V
Gate Threshold Voltage (Vgs(th)@Id) 3.5V
Gate Charge(Qg) 35nC@10V
Number 1 N-channel

Descripción general

Description

BSC109N10NS3G is an introductory course designed to provide foundational knowledge in biological sciences. It typically covers essential topics such as cell structure and function, basic genetics, evolution, ecology, and the principles of organismal biology. The course aims to enhance students' understanding of living systems and their interactions with the environment.
Through lectures, discussions, and laboratory activities, students engage with core concepts and develop critical thinking skills. The curriculum often emphasizes scientific inquiry, experimental design, and data analysis, equipping students with tools to explore biological questions.
This introductory course is suitable for students pursuing various fields in science, health, or education, and it often serves as a prerequisite for more advanced biology courses. By the end of the course, students should have a solid grasp of biological principles and an appreciation for the complexity of life.

Features

The BSC109N10NS3G is a N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It can withstand a high voltage of up to 100V, making it suitable for high-voltage power circuits.
2. Current Capability: The device supports continuous drain current up to 90A, enabling it to handle substantial loads.
3. RDS(on): It has a low on-resistance of approximately 10 mΩ, which reduces power loss and improves efficiency during operation.
4. Fast Switching: The MOSFET allows for fast switching speeds, making it ideal for applications in switch-mode power supplies and motor drivers.
5. Thermal Performance: It offers good thermal stability with a maximum junction temperature of 175°C, ensuring reliability under high-temperature conditions.
6. Package Type: Available in TO-220 or DPAK packages, facilitating easy integration into various designs.
Overall, the BSC109N10NS3G is well-suited for power management and switching applications in consumer electronics, automotive, and industrial sectors.

Package

The BSC109N10NS3G is packaged in a TO-220 form factor, which is a standard package type for power transistors. This package provides efficient heat dissipation and is commonly used in power applications.

Pinout

The BSC109N10NS3G is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the MOSFET's switching; applying voltage allows current to flow between drain and source.
2. Drain (D): The terminal through which current flows out of the MOSFET when it is turned on.
3. Source (S): The terminal through which current enters the MOSFET when it is turned on.
4. Body (B): Typically internally connected to the Source; referenced to the source potential.
This MOSFET is designed for high-speed switching applications and can handle high voltage and current levels, making it suitable for power management and drive applications.

Manufacturer

The BSC109N10NS3G is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in the development and production of a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. Infineon serves various industries such as automotive, industrial electronics, and consumer goods, focusing on energy efficiency, mobility, and security applications. Their products are widely used in automotive systems, renewable energy technologies, and Internet of Things (IoT) devices, reflecting the company's commitment to innovation and sustainability in the semiconductor market.

Application

The BSC109N10NS3G is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor drivers, and switching power supplies. Its features make it suitable for high-efficiency designs in consumer electronics, automotive systems, and industrial equipment. The component's low R_DS(on) enables reduced power loss and improved thermal performance, making it ideal for energy-efficient applications.

Equivalent

The BSC109N10NS3G is an N-channel MOSFET. Equivalent products include the IRF540, STP75NF10, and FQP30N10. Always verify specifications such as voltage, current, and R_DS(on) to ensure compatibility for your specific application.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria