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BSC109N10NS3G
- Fabricante
- Mfr. Parte #BSC109N10NS3G
- Paquete
- Hoja de datos
- En stock9027
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Especificaciones
| Manufacturer | Infineon Technologies |
| Package | PDFN-8(5.2x6.2) |
| Operating Temperature | -55℃~+150℃ |
| RDS(on) | 10.9mΩ@10V,46A |
| Drain to Source Voltage | 100V |
| Pd - Power Dissipation | 78W |
| Current - Continuous Drain(Id) | 63A |
| Reverse Transfer Capacitance (Crss@Vds) | 440pF@50V |
| Input Capacitance(Ciss@Vds) | 2.5nF@50V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3.5V |
| Gate Charge(Qg) | 35nC@10V |
| Number | 1 N-channel |
Descripción general
Description
Through lectures, discussions, and laboratory activities, students engage with core concepts and develop critical thinking skills. The curriculum often emphasizes scientific inquiry, experimental design, and data analysis, equipping students with tools to explore biological questions.
This introductory course is suitable for students pursuing various fields in science, health, or education, and it often serves as a prerequisite for more advanced biology courses. By the end of the course, students should have a solid grasp of biological principles and an appreciation for the complexity of life.
Features
1. Voltage Rating: It can withstand a high voltage of up to 100V, making it suitable for high-voltage power circuits.
2. Current Capability: The device supports continuous drain current up to 90A, enabling it to handle substantial loads.
3. RDS(on): It has a low on-resistance of approximately 10 mΩ, which reduces power loss and improves efficiency during operation.
4. Fast Switching: The MOSFET allows for fast switching speeds, making it ideal for applications in switch-mode power supplies and motor drivers.
5. Thermal Performance: It offers good thermal stability with a maximum junction temperature of 175°C, ensuring reliability under high-temperature conditions.
6. Package Type: Available in TO-220 or DPAK packages, facilitating easy integration into various designs.
Overall, the BSC109N10NS3G is well-suited for power management and switching applications in consumer electronics, automotive, and industrial sectors.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching; applying voltage allows current to flow between drain and source.
2. Drain (D): The terminal through which current flows out of the MOSFET when it is turned on.
3. Source (S): The terminal through which current enters the MOSFET when it is turned on.
4. Body (B): Typically internally connected to the Source; referenced to the source potential.
This MOSFET is designed for high-speed switching applications and can handle high voltage and current levels, making it suitable for power management and drive applications.
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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