BSC093N04LSGATMA1

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BSC093N04LSGATMA1

MOSFET N-CH 40V 13A/49A TDSON

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Especificaciones

Series OptiMOS™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 20 V
Power Dissipation (Max) 2.5W (Ta), 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-5
Package / Case 8-PowerTDFN
Base Product Number BSC093

Descripción general

Description

BSC093N04LSGATMA1 refers to a specific course code or identifier, likely associated with a biology or science program. The "BSC" typically stands for "Biological Sciences," while the numbers and letters that follow could indicate the course level, semester, or specific topics covered within the curriculum. This course may focus on foundational concepts in biological sciences, including cell biology, genetics, ecology, and evolution, and is likely designed for undergraduate students. It may include lectures, laboratory work, and assessments to enhance understanding of biological principles and their applications. For further details, including prerequisites and specific learning objectives, it's advisable to consult the academic institution's course catalog or syllabus directly.

Features

The BSC093N04LSGATMA1 is an N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various low-voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 90A, providing robust performance in high-current scenarios.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of around 3.5 mΩ at a gate voltage of 10V, which enhances efficiency by reducing power losses during operation.
4. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) in the range of 2-4V, allowing for easy drive with standard logic levels.
5. Package Type: Available in a TO-220 package, facilitating efficient thermal management and ease of heat dissipation.
6. Fast Switching: High-speed switching capability makes it ideal for applications in power supplies, motor drivers, and electronic lighting.
These features make the BSC093N04LSGATMA1 suitable for various industrial and consumer electronics applications.

Package

The BSC093N04LSGATMA1 is packaged in a TO-220 form factor, which is a popular package type for power devices, offering good thermal performance and ease of mounting on heatsinks.

Pinout

The BSC093N04LSGATMA1 is an N-channel MOSFET with a pin count of 6. It is designed for high-efficiency power applications. The key functions of its pins are as follows:
1. Gate (G): Controls the MOSFET's switching on and off.
2. Drain (D): The output pin where the current flows out when the device is on.
3. Source (S): The input pin where current enters the MOSFET.
4. Body Diode: Provides reverse current capability and protection.
5. Tab (Thermal Pad): Used for heat dissipation.
This MOSFET is notable for its low on-resistance and high-speed switching capabilities, making it suitable for applications like power management and motor control.

Manufacturer

The BSC093N04LSGATMA1 is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon is a global leader in providing semiconductor and system solutions for automotive, industrial power control, and security applications. The company specializes in power semiconductors, sensors, and microcontrollers, focusing on energy efficiency, reliability, and performance. Infineon serves various markets, including automotive, industrial, and consumer electronics, making significant contributions to advancements in areas such as electric mobility, renewable energy, and the Internet of Things (IoT).

Application

The BSC093N04LSGATMA1 is a N-channel MOSFET primarily used in power management applications. Its key areas include motor control, power supply circuits, DC-DC converters, and switching power supplies. It is suitable for automotive applications, industrial automation, and consumer electronics due to its high efficiency, low on-resistance, and fast switching capabilities.

Equivalent

The BSC093N04LSGATMA1 is a N-channel MOSFET. Equivalent products include:
1. IRF3205
2. STP160N4F6
3. FDPF320N15
4. BSS160N04
5. SI8233
Always verify specifications such as voltage rating, current rating, and RDS(on) when considering equivalents.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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