BSC077N12NS3 G

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BSC077N12NS3 G

MOSFETs N-Ch 120V 98A TDSON-8 OptiMOS 3

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Especificaciones

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Standard Pack Qty 5000

Descripción general

Description

The BSC077N12NS3 G is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It is manufactured by a semiconductor company and typically features low on-resistance and high-speed switching capabilities, making it suitable for power management, switching applications, and various electronic circuits.
Key specifications often include a maximum drain-source voltage (V_DS), a maximum continuous drain current (I_D), and low gate threshold voltage (V_GS(th)). These characteristics enable efficient operation in various applications, such as power supplies, DC-DC converters, and motor control systems.
In summary, the BSC077N12NS3 G is a versatile and efficient component widely used in modern electronics for its reliability and performance in handling power management tasks. For specific datasheets or application notes, consulting the manufacturer's documentation is recommended.

Features

The BSC077N12NS3 G is a N-channel MOSFET from Infineon Technologies, specifically designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 120V.
2. Continuous Drain Current: It can handle a continuous drain current (I_D) of up to 77A, making it suitable for high-power applications.
3. R_DS(on): It offers a low on-resistance of 12 mΩ, which helps reduce conduction losses and improves efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for easy drive compatibility with low-voltage control signals.
5. Package Type: It comes in a TO-220 package, facilitating effective heat dissipation.
6. Switching Performance: Optimized for fast switching, making it ideal for applications like DC-DC converters, motor drives, and power supplies.
These features make the BSC077N12NS3 G a reliable choice for power management in various electronic applications.

Package

The BSC077N12NS3 G is typically housed in a DPAK (TO-252) package type. This surface mount package is designed for power applications, offering efficient thermal performance and ease of integration into circuit designs.

Pinout

The BSC077N12NS3 G is a N-channel MOSFET designed for power applications. It features a total of 5 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET and is where the input signal is applied.
2. Drain (D) - This pin is connected to the load and is where the current flows out of the device when it is switched on.
3. Source (S) - This pin is connected to the ground or the lower potential in the circuit.
In terms of function, the BSC077N12NS3 G operates as a switch, allowing control of high power and voltage levels in electronic circuits, commonly used in applications such as power supplies, motor drives, and DC-DC converters. It has low on-resistance, which helps minimize power loss during operation.

Manufacturer

The BSC077N12NS3 G is manufactured by Infineon Technologies AG, a global semiconductor company based in Germany. Infineon specializes in providing semiconductor and system solutions that are essential for a wide range of applications, including automotive, industrial, and consumer electronics. The company focuses on power management, automotive safety, and connectivity solutions, making it a key player in the development of technologies for energy efficiency and smart systems. Infineon aims to enable a more sustainable future through innovative semiconductor products.

Application

The BSC077N12NS3 G is an N-channel MOSFET primarily used in power applications such as DC-DC converters, motor control, and power management systems. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power regulation in consumer electronics, industrial equipment, and automotive applications. Additionally, it is utilized in renewable energy systems like solar inverters.

Equivalent

The BSC077N12NS3 G is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and FDS6674. Always verify specifications like voltage, current rating, and package type to ensure compatibility for your specific application.

Envío

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Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

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