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BSC011N03LSI
MOSFETs N-Ch 30V 100A TSDSON-8 OptiMOS
- Fabricante
- Mfr. Parte #BSC011N03LSI
- Paquete
- Hoja de datos BSC011N03LSI DataSheet
- En stock21066
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Especificaciones
| Packaging | MouseReel |
| Standard Pack Qty | 5000 |
Descripción general
Description
This component typically has a maximum V_DS (drain-source voltage) rating around 30V and can handle a substantial continuous drain current, often exceeding 100A, depending on the application and thermal management. The "LSI" designation indicates that it is optimized for low-voltage, high-performance applications, commonly found in consumer electronics, automotive systems, and renewable energy systems.
When selecting a MOSFET like the BSC011N03LSI, key parameters to consider include its R_DS(on) (on-resistance), gate threshold voltage, and thermal resistance, ensuring compatibility with your specific circuit requirements. Overall, this MOSFET is instrumental in enhancing efficiency and performance in modern electronic designs.
Features
1. Voltage Rating: It typically supports a maximum drain-source voltage (Vds) of 30V.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 11A, making it suitable for high-current applications.
3. Low RDS(on): It offers a low on-resistance (RDS(on)) value, usually around 3.5 mΩ, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (Vgs(th)) ranges from 1V to 2.5V, allowing for low-voltage drive capabilities.
5. Fast Switching Speed: Designed for rapid switching, it enhances efficiency in switching power supply circuits.
6. Thermal Performance: The package is designed to facilitate effective heat dissipation, improving reliability in thermal management.
7. Applications: Suitable for various applications including DC-DC converters, motor drivers, and power management systems in consumer electronics.
Overall, the BSC011N03LSI is ideal for applications requiring compact, efficient, and reliable power handling.
Package
Pinout
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): Connection to the load, where the current flows out.
3. Source (S): Connection to the ground or negative side of the circuit.
4. Gate-Source (G-S) connection: Used for driving the gate with a control signal.
5. Drain-Source (D-S) connection: Conducts current between the drain and source.
6. Body Diode: Not a pin but an inherent feature, allowing for reverse current flow.
This MOSFET is designed for low on-resistance and high-speed switching, making it suitable for applications like DC-DC converters and motor drivers. Always consult the specific datasheet for detailed electrical characteristics and pin configurations.
Manufacturer
Application
Equivalent
Envío
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Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
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Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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