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BLF278
RF MOSFET 50V CDFM4
- Fabricante
- Mfr. Parte #BLF278
- Paquete
- Hoja de datos
- En stock3954
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Especificaciones
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) Common Source |
| Gain | 18dB |
| Voltage - Test | 50 V |
| Current Rating (Amps) | 2.5mA |
| Current - Test | 200 mA |
| Power - Output | 300W |
| Voltage - Rated | 125 V |
| Package | SOT-262A1 |
| Supplier Device Package | CDFM4 |
| Packaging | Bulk |
Descripción general
Description
Key specifications of BLF278 include a maximum drain-source voltage (Vds) of around 50V, a continuous drain current (Id) of up to 25A, and a low Rds(on) value, which minimizes power loss during operation. Its robust design enables it to perform well in demanding environments, making it a popular choice in both consumer and industrial electronics.
Overall, BLF278 is favored for its reliability and efficiency in managing high power levels in various electronic circuits.
Features
1. Power Output: Capable of delivering high output power, typically around 100W in linear mode.
2. Frequency Range: Operates efficiently across a wide frequency range, typically from 30 MHz to 600 MHz, making it suitable for various communication standards.
3. High Gain: Offers high power gain, which reduces the need for additional amplification stages.
4. Thermal Stability: Designed with good thermal management characteristics, allowing for reliable operation under high temperatures.
5. Durability: Built to withstand harsh operating conditions with robust packaging.
6. Class AB Operation: Suitable for Class AB amplifiers, providing an optimal balance between efficiency and linearity.
7. S-Parameters: Good S-parameters for easy matching to RF circuits.
These features make the BLF278 a popular choice in RF amplification for professional applications, including transmitters and linear amplifiers.
Package
Pinout
1. Gate (G) - Controls the transistor's switching and amplification.
2. Drain (D) - Connects to the high-voltage supply and is where the output RF signal is taken.
3. Source (S) - Common ground point for the device, connected to the RF circuit ground.
4. Gate (G) - Similar to Pin 1, it serves as a second gate connection for enhanced performance.
5. Drain (D) - A second drain connection for improved thermal management and performance.
6. Source (S) - A second source connection for better heat dissipation.
The transistor is designed for use in applications such as base stations and other high-frequency RF systems, providing high efficiency and linearity.
Manufacturer
Application
1. Broadcasting: FM and TV transmitters.
2. Telecommunications: Base stations for mobile networks.
3. Industrial RF systems: RF heating and plasma generation.
4. Aerospace and Defense: Radar systems and communication equipment.
5. Test Equipment: Signal generators and amplifiers.
Its high efficiency and linearity make it suitable for these demanding applications.
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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