BAW56LT1G

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BAW56LT1G

DIODE ARRAY GP 70V 200MA SOT23-3

  • Fabricante
  • Mfr. Parte #BAW56LT1G
  • Paquete SOT23-3
  • Hoja de datos
  • En stock7971

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Especificaciones

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DiodeConfiguration 1 Pair Common Anode
DiodeType Standard
Voltage-DCReverse(Vr)(Max) 70 V
Current-AverageRectified(Io)(perDiode) 200mA (DC)
Voltage-Forward(Vf)(Max)@If 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed
ReverseRecoveryTime(trr) 6 ns
Current-ReverseLeakage@Vr 2.5 µA @ 70 V
OperatingTemperature-Junction -55°C ~ 150°C
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Descripción general

Description

The BAW56LT1G is a general-purpose, surface-mount Schottky diode manufactured by ON Semiconductor. It is designed for low-voltage, high-speed switching applications, making it suitable for various electronic devices. This diode features a low forward voltage drop, which enhances its efficiency, especially in power management systems.
Key specifications include a maximum repetitive reverse voltage (VRRM) of 60V, a forward current (IF) rating of 1A, and a forward voltage drop (VF) typically around 0.45V at 1A. Its fast switching characteristics make it ideal for applications such as rectification, clamping, and protection circuits.
The package type is SOD-123, which offers a compact footprint for space-constrained designs. Its robust construction allows it to operate efficiently in a wide temperature range, ensuring reliability in diverse environments. Overall, the BAW56LT1G is a versatile component commonly used in consumer electronics, automotive applications, and power supplies.

Features

The BAW56LT1G is a general-purpose switching diode, commonly used in various electronics applications. It features:
1. Voltage and Current Ratings: Maximum reverse voltage of 70V and forward current of 200mA, allowing for versatile use in low to medium voltage applications.

2. Fast Switching Speed: With a typical recovery time of around 4ns, it is suitable for high-speed switching applications.

3. Small Package: Available in the SOT-23 package, it is compact, making it ideal for space-constrained designs.

4. Low Forward Voltage Drop: Typically around 0.7V at 100mA, which contributes to higher efficiency in circuits.

5. Temperature Range: Operating temperature range from -55°C to +150°C, ensuring reliability in various environmental conditions.
These features make the BAW56LT1G suitable for use in signal processing, clamping, and rectification applications.

Package

The BAW56LT1G is packaged in a SOT-23 surface mount package.

Pinout

The BAW56LT1G is a dual diode packaged in a SOT-23 form factor, which typically has 5 pins. The function of the BAW56LT1G involves its role as a switching and signal diode, designed for various applications such as switching circuits, rectification, and clamping applications.
In terms of specifications, it features low forward voltage drop and high-speed switching capabilities, making it suitable for high-frequency applications. The specific pin configuration typically includes two anodes and a common cathode for the two diodes, allowing for versatile use in circuit designs.
For precise applications, refer to the manufacturer's datasheet for detailed electrical characteristics, including forward and reverse voltage specifications.

Manufacturer

The BAW56LT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including analog, discrete, and power management devices, as well as sensors and integrated circuits. The company serves multiple industries, including automotive, industrial, cloud, and consumer electronics. ON Semiconductor is known for its commitment to innovation, sustainability, and providing high-performance solutions that meet the needs of various applications.

Application

The BAW56LT1G is a small-signal diode commonly used in RF applications, signal detection, clamping, and voltage regulation. Its key areas include switching circuits, amplification in RF and microwave applications, signal mixing, and demodulation. Additionally, it is suitable for low-voltage applications, ensuring efficient performance in consumer electronics, telecommunications, and automotive systems.

Equivalent

The BAW56LT1G is a dual Schottky diode with a low forward voltage drop. Equivalent products include the BAT54, BAT54A, and 1N5817. Always verify specific characteristics like voltage ratings and current capabilities before substitution to ensure compatibility.

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