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BAR9002ELE6327XTMA1
RF DIODE PIN 80V 250MW TSLP-2-19
- Fabricante
- Mfr. Parte #BAR9002ELE6327XTMA1
- Paquete 0402 (1006 Metric)
- Hoja de datos BAR9002ELE6327XTMA1 DataSheet
- En stock4475
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Especificaciones
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DiodeType | PIN - Single |
| Voltage-PeakReverse(Max) | 80V |
| Current-Max | 100 mA |
| Capacitance@VrF | 0.35pF @ 1V, 1MHz |
| Resistance@IfF | 800mOhm @ 10mA, 100MHz |
| PowerDissipation(Max) | 250 mW |
| OperatingTemperature | 150°C (TJ) |
| Package/Case | 0402 (1006 Metric) |
Descripción general
Description
To provide a more detailed introduction, it's essential to refer to the manufacturer’s documentation or datasheets associated with BAR9002ELE6327XTMA1. This will include information about its specifications, applications, and functionalities. Commonly, components like this could be used in various applications ranging from consumer electronics to industrial machinery.
If you have a specific context or industry in mind, I can provide more tailored information or insights related to that.
Features
1. Power Supply: Operates from a wide voltage range, typically between 2.7V to 36V.
2. Input Bias Current: Low input bias currents suitable for high-impedance sensor interfaces.
3. Gain Bandwidth Product: High gain bandwidth, ensuring stable and quick signal amplification.
4. Common-Mode Rejection Ratio (CMRR): High CMRR for accurate differential signal amplification.
5. Temperature Range: Designed to operate across a wide temperature spectrum, making it suitable for industrial applications.
6. Package Type: Available in compact surface-mount packages, facilitating easy integration into circuit boards.
7. Low Noise Performance: Ensures minimal signal distortion and improved overall signal clarity.
This amplifier is ideal for precision measurement, instrumentation, and sensor applications, where accuracy and reliability are crucial.
Package
Pinout
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal of the first MOSFET.
3. Drain 1 (D1) - Drain terminal of the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal of the second MOSFET.
6. Drain 2 (D2) - Drain terminal of the second MOSFET.
7. Common Ground (GND) - Common ground for both MOSFETs.
8. Thermal Pad (Thermal) - Provides heat dissipation.
The device is packaged in a compact DPAK format, facilitating efficient thermal management and compact PCB design.
Manufacturer
Application
Equivalent
1. BFG540 - Low-noise transistor
2. MGA-31589 - RF amplifier from Avago Technologies
3. ATF-54143 - RF amplifier for low-noise applications
Always verify compatibility for your specific application before substituting components.
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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