AS4C64M8D2-25BIN

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AS4C64M8D2-25BIN

IC DRAM 512MBIT PARALLEL 60FBGA

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  • Mfr. Parte #AS4C64M8D2-25BIN
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Especificaciones

Part Status Active
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 60-TFBGA
Supplier Device Package 60-FBGA (8x10)
Base Product Number AS4C64
Clock Frequency 400 MHz
Access Time 400 ps

Descripción general

Description

The AS4C64M8D2-25BIN is a 64Mb (megabit) DRAM chip designed for high-performance applications, typically used in mobile devices, tablets, and other consumer electronics. It features a 4-bit wide data bus and operates at a clock speed of 25 MHz. This DDR (Double Data Rate) SDRAM component offers improved data transfer rates and efficiency compared to its predecessors by allowing data to be transferred on both the rising and falling edges of the clock cycle.
Key features include low power consumption, making it suitable for battery-operated devices, and support for various interface standards. Its compact size and high density also enable manufacturers to design smaller, more efficient devices without sacrificing performance. The AS4C64M8D2-25BIN is typically packaged in a standard SOJ (Small Outline J-lead) format, allowing for easy integration into electronic circuits. Overall, it serves as a reliable memory solution for various applications requiring efficient data handling and storage.

Features

The AS4C64M8D2-25BIN is a 512 Megabit (64 Megabytes) asynchronous DRAM (Dynamic Random Access Memory) chip. Key features include:
1. Architecture: It consists of 8 bits per chip and is organized as 4 banks of 16M x 8.
2. Speed: Operates at a clock speed of 25 ns, suitable for various applications requiring moderate-speed memory.
3. Voltage: Typically operates at a supply voltage of 3.3V, making it compatible with low-power systems.
4. Interface: Features asynchronous access, allowing for easier integration in designs without needing a clock signal.
5. Applications: Ideal for consumer electronics, networking applications, and industrial systems where cost-effective memory solutions are needed.
6. Package: Available in a standard 54-pin TSOP-II package, facilitating easy mounting on PCBs.
Overall, the AS4C64M8D2-25BIN provides a reliable and efficient memory solution for various electronic applications.

Package

The AS4C64M8D2-25BIN is typically packaged in a standard 54-ball FBGA (Fine Ball Grid Array) format, which is suitable for high-density memory applications.

Pinout

The AS4C64M8D2-25BIN is a 64Mb (8M x 8) DDR3 SDRAM memory chip with a total of 54 pins. Its primary function is to serve as a high-speed memory solution for various applications, including computing and consumer electronics.
Key pin functions include:
- Data Bus (DQ0-DQ7): 8-bit data input/output lines.
- Address Bus (A0-A12): Used to select memory locations.
- Control Pins:
- CS (Chip Select): Activates the chip.
- RAS (Row Address Strobe): Activates row access.
- CAS (Column Address Strobe): Activates column access.
- WE (Write Enable): Controls write operations.
- Clock Pin (CK): Provides the timing for synchronous operations.
- Power and Ground Pins (VDD, VSS): Supply power and ground connections.
This configuration enables efficient data storage and retrieval, making it suitable for high-performance applications.

Manufacturer

The AS4C64M8D2-25BIN is manufactured by Alliance Semiconductor Corporation. Alliance Semiconductor is a company that specializes in designing and producing a variety of semiconductor products, including memory solutions, microcontrollers, and mixed-signal products. The company focuses on providing innovative solutions for applications in consumer electronics, automotive, industrial, and telecommunications sectors. Founded in the 1990s, Alliance Semiconductor serves a global market, emphasizing high-performance and cost-effective semiconductor technologies.

Application

The AS4C64M8D2-25BIN is a 512Mb DDR3 SDRAM memory chip primarily used in applications such as consumer electronics, telecommunications, networking devices, and computer systems. It is ideal for mobile devices, laptops, tablets, and embedded systems where high-speed data processing and efficient power consumption are essential. Additionally, it can be utilized in gaming consoles and industrial applications requiring reliable memory solutions.

Equivalent

The AS4C64M8D2-25BIN chip is a 64Mb (8M x 8) DDR2 SDRAM memory chip. Equivalent products can include:
1. MT8HTF12864AY-667
2. K4T1G164QF-HC6
3. Hynix H57V641620HFP-7
4. Nanya NT5CB128M8DT-37
5. Samsung K4T1G164QF-GC8
Always verify specifications such as speed, voltage, and timing before substitution.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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