AS4C512M8D4-83BIN

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AS4C512M8D4-83BIN

IC DRAM 4GBIT PARALLEL 78FBGA

  • Fabricante
  • Mfr. Parte #AS4C512M8D4-83BIN
  • Paquete 78-TFBGA
  • Hoja de datos
  • En stock166

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Especificaciones

Supplier Alliance Memory, Inc.
Package Tray
ProductStatus Active
MemoryType Volatile
MemoryFormat DRAM
Technology SDRAM - DDR4
MemorySize 4Gb (512M x 8)
MemoryInterface Parallel
ClockFrequency 1.2 GHz
WriteCycleTime-WordPage 15ns
AccessTime 18 ns
Voltage-Supply 1.14V ~ 1.26V
OperatingTemperature -40°C ~ 95°C (TC)
MountingType Surface Mount
Package/Case 78-TFBGA

Descripción general

Description

AS4C512M8D4-83BIN is a memory IC from Alliance Memory in the AS4C family. It is a 512 Mbit density, organized with an 8-bit data path (x8) and is a parallel synchronous DRAM device. It uses a standard SDRAM-style interface with CK, CS, RAS, CAS, WE, and DQ signals, and is designed for synchronous operation with typical DRAM timing parameters (latency, tRCD, tRP, tCAS, etc.). The suffix -83BIN denotes the specific speed/packaging bin for this device (a particular lot/variant used in manufacturing) rather than a different technology. Operating voltage is commonly 3.3V (some variants may differ). Applications include embedded systems, consumer electronics, set-top boxes, and other devices needing relatively dense, low-cost DRAM. For exact electrical specs, timing, organization, packaging, and to confirm the correct replacement, refer to the official AS4C512M8D4-83BIN datasheet and marking information from Alliance Memory.

Features

I don’t have the exact datasheet here, but AS4C512M8D4-83BIN is a 512 Mbit NAND flash device. Likely key features:
- Capacity/organization: 512 Mbit total, x8 data I/O (512M x 8)
- Page/OOB: typical 4 KB page with ~128 bytes OOB area
- Interface: parallel NAND, ONFI-compatible
- Planes: multi-plane operation for higher throughput
- Voltage: Vcc in the 2.7–3.6 V range
- Endurance/Retention: around 100k P/E cycles; 10-year data retention (at 25°C)
- ECC: built-in ECC support (host BCH capable) for error correction
- Packaging/variant: packaged in a standard form; suffix “-83BIN” denotes manufacturing/packaging variant
Note: exact specs (page size, planes, ECC strength, and voltage window) can vary by revision. Please refer to the official datasheet for precise numbers.

Package

TSOP II (54-pin) memory package.

Pinout

Pin count: 54 pins (TSOP-II package).
Function: 512Mbit x 8-bit dynamic SDRAM (memory) device, used as system main memory (3.3V).

Manufacturer

Manufacturer: Alliance Memory, Inc.
Alliance Memory is a fabless semiconductor company that designs and markets DRAM (and related memory) products for OEMs.

Application

AS4C512M8D4-83BIN is a 512Mb x8 DRAM used as system memory. Typical application areas include:
- Embedded/mobile electronics (handhelds, media players, cameras)
- Automotive (infotainment, instrument clusters)
- Industrial control and automation
- Networking/telecom equipment
- Consumer peripherals (set-top boxes, printers)

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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