AS4C256M16D4-75BIN

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AS4C256M16D4-75BIN

IC DRAM 4GBIT PARALLEL 96FBGA

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  • Mfr. Parte #AS4C256M16D4-75BIN
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Especificaciones

Part Status Not For New Designs
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR4
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Clock Frequency 1.333 GHz
Write Cycle Time - Word, Page 15ns
Access Time 18 ns
Voltage - Supply 1.14V ~ 1.26V
Operating Temperature -40°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 96-TFBGA
Supplier Device Package 96-FBGA (7.5x13.5)
Base Product Number AS4C256

Descripción general

Description

The AS4C256M16D4-75BIN is a DRAM (Dynamic Random Access Memory) module produced by Alliance Memory. It is a DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) chip featuring a 256 Megabits (32 Megabytes) capacity organized as 16 bits x 16 banks. The "75" in its name indicates a maximum operating frequency of 75 nanoseconds, which translates to a data transfer rate compatible with DDR3 standards.
This memory chip operates at a voltage of 1.5V, offering improved power efficiency compared to older DRAM technologies. It is commonly used in various applications, including consumer electronics, networking equipment, and industrial devices, providing a balance of performance and cost-effectiveness.
The AS4C256M16D4-75BIN is designed for easy integration into systems requiring reliable memory solutions and is compliant with JEDEC standards, ensuring compatibility with a wide range of devices.

Features

The AS4C256M16D4-75BIN is a high-performance DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip designed for various memory applications. Key features include:
1. Capacity: 256 Megabits (32 Megabytes) with a configuration of 16 bits x 16 bits.
2. Data Rate: Operates at a maximum data rate of 1600 MT/s (megatransfers per second).
3. Speed Grade: 75 ns access time.
4. Voltage: Typically operates at a supply voltage of 1.5V.
5. Package: Available in a compact FBGA (Fine Ball Grid Array) package for efficient space utilization.
6. Architecture: Organized in 8 banks for improved performance and efficiency.
7. Temperature Range: Suitable for industrial applications with an extended temperature range.
This memory chip is commonly used in applications requiring reliable and high-speed memory solutions, such as consumer electronics, automotive, and industrial devices.

Package

The AS4C256M16D4-75BIN is packaged in a TFBGA (Thin Fine Ball Grid Array) format.

Pinout

The AS4C256M16D4-75BIN is a 256 Megabit (32 Megabytes) DDR3 SDRAM memory chip with a pin count of 78. This device is designed for high-speed memory applications and operates with a data rate of 1600 MT/s.
The main functions of the pins include:
1. Data Pins (DQ): 16 data lines for transferring data.
2. Address Pins (A): Used for addressing memory locations.
3. Control Pins: Includes signals like Chip Select (CS), Clock (CK), Command Latch Enable (CLE), and Write Enable (WE) to manage read/write operations.
4. Power Pins: VDD for power supply and VSS for ground connection.
5. Bank Address Pins (BA): To select the bank being accessed.
This configuration allows the chip to support various memory operations such as read, write, and refresh cycles, making it suitable for applications in computers and other electronics requiring fast memory access.

Manufacturer

The AS4C256M16D4-75BIN is manufactured by Alliance Semiconductor Corporation. Alliance is a semiconductor company that specializes in developing memory solutions, including DRAM and Flash memory products, as well as other advanced memory technologies. The company focuses on providing high-performance, cost-effective solutions for various applications, including consumer electronics, networking, and industrial sectors. They are known for their innovation in memory solutions, aiming to meet the growing demands of modern technology.

Application

The AS4C256M16D4-75BIN is a DDR3 SDRAM memory chip commonly used in applications such as mobile devices, laptops, desktops, servers, and embedded systems. Its high-speed performance and low power consumption make it suitable for graphics processing, data buffering, and memory expansion in consumer electronics and industrial applications.

Equivalent

The AS4C256M16D4-75BIN chip is a 256Mb DDR3 SDRAM memory chip. Equivalent products include:
1. MT41K256M16 (Micron)
2. K4B4G1646E (Samsung)
3. H5TQ1G83BFR (Hynix)
These alternatives should have similar specifications regarding capacity, speed, and pin configuration. Always verify specific features and compatibility before replacement.

Envío

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ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

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