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AIKW50N60CT
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- Mfr. Parte #AIKW50N60CT
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- En stock2274
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Especificaciones
| Packaging | Tube |
| Brand | Infineon Technologies |
| Product Type | IGBT Transistors |
| Subcategory | IGBTs |
| Maximum Gate Emitter Voltage | - 20 V, 20 V |
Descripción general
Description
Key specifications include a low on-resistance (RDS(on)), which minimizes power losses and improves efficiency in circuits. This MOSFET is optimized for fast switching speeds, making it ideal for applications requiring rapid on/off control. Its robust construction allows for high thermal performance, ensuring reliability under demanding operating conditions.
The AIKW50N60CT is commonly used in industrial applications, renewable energy systems, and electric vehicles, where efficient power management is critical. Overall, it represents a reliable choice for engineers seeking effective solutions for high-voltage and high-current requirements.
Features
1. Voltage Rating: It typically has a maximum drain-source voltage (Vds) of 600V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 50A, allowing for robust performance in power conversion.
3. Low Rds(on): The on-resistance (Rds(on)) is low, which minimizes conduction losses and improves efficiency in switching applications.
4. Fast Switching Speed: It offers rapid switching capabilities, facilitating high-frequency operation, essential for efficient power management.
5. Thermal Performance: Designed with a high power dissipation capacity, it includes a TO-220 package that ensures effective heat dissipation.
6. Gate Threshold Voltage: The gate voltage required to turn on the device is optimized for compatibility with standard drive circuits.
These features make the AIKW50N60CT ideal for use in applications like power supplies, motor control, and other electronic devices requiring efficient power switching.
Package
Pinout
The pin configuration is typically as follows:
1. Gate (G) - Controls the MOSFET; a voltage applied here turns the device on or off.
2. Drain (D) - The terminal through which the load current flows when the MOSFET is on.
3. Source (S) - The terminal connected to the ground or lower potential; current flows from the drain to the source when the device is activated.
4. Body (B) - Internal terminal often connected to the source; it helps with thermal management and device protection.
The AIKW50N60CT is designed for applications like power supplies, motor drivers, and inverters, handling high voltages (up to 600V) and currents (up to 50A).
Manufacturer
Application
Equivalent
Envío
Métodos de envíoNosotros
ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.
Referencia de tarifas de envío (DHL/FedEx):
DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.
FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.
EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.
Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.
Pagos
Payment Methods
El plazo de pago es 100% prepagado.
Actualmente, solo aceptamos los siguientes métodos de pago:
1. de PayPal
2. Tarjeta de crédito/débito
3. Transferencia bancaria
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