2SK3557-7-TB-E

Las imágenes son solo para referencia

2SK3557-7-TB-E

RF MOSFET N-CH JFET 5V 3CP

  • Fabricante
  • Mfr. Parte #2SK3557-7-TB-E
  • Paquete SC-59-3
  • Hoja de datos
  • En stock5302

100% original & Nuevo

24 horas listos para el envío

Garantía de 365 días

RFQ y Obtenga más descuentos

Especificaciones

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType N-Channel JFET
Frequency 1kHz
Voltage-Test 5 V
CurrentRating(Amps) 50mA
NoiseFigure 1dB
Current-Test 1 mA
Voltage-Rated 15 V
Package/Case TO-236-3, SC-59, SOT-23-3

Descripción general

Description

The 2SK3557-7-TB-E is a high-power N-channel MOSFET, commonly used in various electronic applications such as power amplifiers, switching power supplies, and motor control systems. It features low on-resistance and fast switching capabilities, making it suitable for high-efficiency designs.
Key specifications typically include a maximum drain-source voltage (V_DS) of around 30V, a continuous drain current (I_D) rating of up to 60A, and a low gate threshold voltage (V_GS(th)), which enhances its performance in low-voltage applications. The device is housed in a TO-220 package, facilitating efficient heat dissipation and ease of mounting on heatsinks.
The 2SK3557-7-TB-E is ideal for applications requiring reliable performance under high load conditions, and its characteristics make it a popular choice among engineers seeking robust solutions in power electronics. Always consult the specific datasheet for detailed electrical characteristics and application guidelines.

Features

The 2SK3557-7-TB-E is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) typically around 60V.
2. Current Rating: Continuous drain current (Id) up to approximately 30A.
3. RDS(on): Low on-resistance (RDS(on)) for efficient operation, minimizing power loss.
4. Gate Threshold Voltage: Suitable threshold voltage for easy drive compatibility with low-voltage logic levels.
5. Package Type: Available in a TO-220 package for effective thermal management.
6. Fast Switching Speed: Enables high-frequency applications, making it suitable for power supply and motor control.
7. High Reliability: Designed for robust performance in various applications.
This MOSFET is commonly used in power management circuits, inverters, and other switching applications requiring high efficiency and reliability.

Package

The 2SK3557-7-TB-E is typically packaged in a TO-220 form factor. This type of package is designed for power transistors, featuring a sturdy structure for enhanced thermal performance and ease of mounting on heatsinks.

Pinout

The 2SK3557-7-TB-E is a N-channel MOSFET transistor with a total of 8 pins. Its primary functions include switching and amplification in electronic circuits.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The output where the load is connected.
3. Source (S) - The input from the power supply.
The remaining pins mainly serve for thermal and electrical management in the package.
This device is commonly used in power applications such as motor control, power supplies, and in various switching applications due to its high efficiency and fast switching capabilities. Always refer to the specific datasheet for detailed electrical characteristics and maximum ratings for safe operation.

Manufacturer

The manufacturer of the 2SK3557-7-TB-E is ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components and solutions, including power management, analog, and logic devices. The company serves various industries, including automotive, industrial, communications, and consumer electronics, providing innovative technologies to support the growing demand for energy efficiency and connectivity in electronic systems. Established through the merger of several semiconductor companies, ON Semiconductor has a strong presence in the market and is known for its commitment to quality and sustainability in semiconductor production.

Application

The 2SK3557-7-TB-E is an N-channel MOSFET primarily used in power electronics applications. Its typical application areas include switching power supplies, DC-DC converters, motor drives, and other high-frequency switching applications. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power management in consumer electronics, industrial equipment, and automotive systems.

Equivalent

The 2SK3557-7-TB-E is an N-channel MOSFET typically used in power applications. Equivalent products include the IRF3205, STP75NF75, and FQP50N06. Always verify specific electrical characteristics like voltage, current ratings, and package type to ensure compatibility for your application.

Envío

Métodos de envíoNosotros

ofrecer servicios de envío globales a través de DHL, FedEx, TNT, UPS, o cualquier otro expediente de su elección.


Referencia de tarifas de envío (DHL/FedEx):

DHL: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 2-5 días hábiles.

FedEx: El costo de envío oscila entre $25-$40 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

UPS: El costo de envío oscila entre $25-$45 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

TNT: El costo de envío oscila entre $25-$65 (0.5kg), con un tiempo de entrega estimado de 3-7 días hábiles.

EMS: El costo de envío oscila entre $30-$50 (0.5kg), con un plazo de entrega estimado de 7-15 días hábiles.

Correo aéreo registrado: El costo de envío es de $2-$4 (0.1kg), con un tiempo de entrega estimado de 5-20 días hábiles.

Pagos

Payment Methods

El plazo de pago es 100% prepagado.

Actualmente, solo aceptamos los siguientes métodos de pago:

1. de PayPal

2. Tarjeta de crédito/débito

3. Transferencia bancaria

Similar