2SK2225-E

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2SK2225-E

MOSFET N-CH 1500V 2A TO3PFM

  • Fabricante
  • Mfr. Parte #2SK2225-E
  • Paquete TO-3PFM-3
  • Hoja de datos
  • En stock4428

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Especificaciones

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 1500 V
Current-ContinuousDrain(Id)@25°C 2A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 15V
RdsOn(Max)@IdVgs 12Ohm @ 1A, 15V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 984.7 pF @ 30 V
PowerDissipation(Max) 50W (Tc)
OperatingTemperature 150°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-3PFM

Descripción general

Description

The 2SK2225-E is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications, including power management and switching. It features a low on-resistance, high-speed switching capability, and is capable of handling moderate voltage and current levels. Typically, its specifications include a maximum drain-source voltage (V_DS) of around 60V and a continuous drain current (I_D) of approximately 15A, making it suitable for use in power supply circuits, motor drivers, and other high-efficiency applications.
The device is constructed with a thermal-resistant package, allowing for effective heat dissipation. It is often used in consumer electronics, automotive applications, and industrial systems where efficiency and reliability are paramount. The 2SK2225-E is also characterized by fast switching times, which contribute to reduced switching losses and improved overall system performance. Always consult the manufacturer's datasheet for detailed specifications and application guidelines.

Features

The 2SK2225-E is an N-channel MOSFET designed for switching and amplification applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: Continuous drain current (I_D) up to 15A, making it suitable for high-power applications.
3. Low On-resistance: On-resistance (R_DS(on)) is typically low, allowing efficient conduction with minimal power loss.
4. High Speed: Fast switching capabilities, suitable for high-frequency applications.
5. Thermal Stability: Good thermal performance with a maximum junction temperature (T_j) of 150°C.
6. Package Type: Typically available in TO-220 or similar packages, facilitating easy heat dissipation.
7. Applications: Used in various applications including power supplies, motor drives, and audio amplifiers.
This MOSFET combines efficiency with high performance, making it a versatile component for electronic designs.

Package

The 2SK2225-E is packaged in a TO-220 form factor, which is a metal package commonly used for power transistors. This packaging provides efficient heat dissipation and is suitable for various electronic applications.

Pinout

The 2SK2225-E is an N-channel MOSFET transistor. It typically comes in a TO-220 package, which has three pins.
Pin Count and Functions:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D) - The current flows from the drain to the source when the MOSFET is turned on. This pin connects to the load in a circuit.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply. It serves as the return path for the current flowing through the load.
The 2SK2225-E is commonly used in power switching applications due to its high efficiency and fast switching capabilities.

Manufacturer

The 2SK2225-E is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. ON Semiconductor is a multinational company specializing in semiconductor solutions. They design and produce a wide range of electronic components, including power management devices, logic ICs, and analog products, catering to various industries such as automotive, industrial, telecommunications, and consumer electronics. The company focuses on energy-efficient innovations and has a strong presence in the semiconductor market.

Application

The 2SK2225-E is an N-channel MOSFET primarily used in applications such as power amplification, switching circuits, and low-voltage power supplies. It is suitable for driving loads in electronic devices, motor control, and DC-DC converters, thanks to its low on-resistance and high-speed switching capabilities. Additionally, it finds use in audio amplification and signal processing circuits.

Equivalent

The 2SK2225-E is an N-channel MOSFET. Equivalent products include:
1. 2SK2225 (non-E version)
2. 2N7000
3. IRF540
4. BSS138
5. STP16NF06
Always check the specific electrical characteristics and ratings to ensure compatibility for your application.

Envío

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