2N7002NXBKR

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2N7002NXBKR

MOSFET N-CH 60V 270MA TO236AB

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Especificaciones

Supplier Nexperia USA Inc.
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 270mA (Ta), 330mA (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 5V, 10V
RdsOn(Max)@IdVgs 2.8Ohm @ 200mA, 10V
Vgs(th)(Max)@Id 2.1V @ 250µA
GateCharge(Qg)(Max)@Vgs 1 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 23.6 pF @ 10 V
PowerDissipation(Max) 310mW (Ta), 1.67W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage TO-236AB

Descripción general

Description

The 2N7002NXBKR is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for low-voltage and low-power applications. It is commonly used in switching and amplification purposes in electronic circuits. The device features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of 0.5A.
Key characteristics include a low on-resistance (R_DS(on)), which enhances efficiency by minimizing power loss during operation. It typically has a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, making it suitable for logic-level applications. The 2N7002NXBKR is housed in a compact SOT-23 package, allowing for saving board space.
This MOSFET is ideal for applications in power management, signal switching, and driver circuits. Its robustness and reliability make it a popular choice among engineers for various consumer electronics and automated systems. Always refer to the manufacturer's datasheet for detailed specifications and recommended operating conditions.

Features

The 2N7002NXBKR is an N-channel MOSFET designed for low-power switching applications. Key features include:
1. Voltage Rating: Drain-source voltage (V_DS) up to 60V, making it suitable for various applications.
2. Continuous Drain Current: Supports continuous drain current (I_D) up to 300 mA, allowing efficient operation in low-power circuits.
3. Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) typically ranges from 1V to 3V, enabling operation with low gate drive voltages.
4. Low On-Resistance: On-resistance (R_DS(on)) is low, typically around 0.5 ohms at V_GS = 10V, minimizing power loss during operation.
5. Package Type: Comes in a surface mount SO-8 package, providing compactness and ease of integration into PCB layouts.
6. Fast Switching Speed: Suitable for high-speed switching applications, enhancing efficiency in power management.
These features make the 2N7002NXBKR ideal for applications in power control circuits, switching regulators, and signal switching.

Package

The 2N7002NXBKR is packaged in a SOT-23 surface-mount package.

Pinout

The 2N7002NXBKR is an N-channel MOSFET transistor with a total of three pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D) - This is the terminal through which the current enters the MOSFET. It connects to the load in the circuit.
3. Source (S) - This terminal is where the current exits the MOSFET. It is typically connected to ground or the low side of the circuit.
The 2N7002NXBKR is popular in low-power applications for switching and amplifying signals. It has a low gate threshold voltage, making it suitable for interfacing with microcontrollers and other logic circuits.

Manufacturer

The 2N7002NXBKR is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including power management, analog, digital, and mixed-signal solutions. The company serves various industries such as automotive, industrial, communications, and consumer electronics. ON Semiconductor focuses on energy-efficient technologies, providing innovative products that enable customers to create more sustainable solutions.

Application

The 2N7002NXBKR is an N-channel MOSFET commonly used in electronic applications such as switching, amplification, and signal processing. It is suitable for low-power applications, including driving LEDs, relay control, and inverters. Its compact size makes it ideal for use in consumer electronics, automotive circuits, and power management systems. Additionally, it is often utilized in digital logic circuits and as a level shifter in communication interfaces.

Equivalent

The 2N7002NXBKR is an N-channel MOSFET. Equivalent products include the BS170, 2N7000, and 2N7002. These alternatives may have slightly different specifications, so verify parameters like voltage rating, current rating, and package type for compatibility.

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